The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2015
Filed:
Jul. 14, 2014
Globalfoundries Inc., Grand Cayman, KY;
Andy Chih-Hung Wei, Queensbury, NY (US);
Dae Geun Yang, Watervliet, NY (US);
Dae-han Choi, Ludonville, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
Approaches for providing a single spacer, double hardmask dual-epi FinFET are disclosed. Specifically, at least one approach for providing the FinFET includes: forming a set of spacers along each sidewall of a plurality of fins of the FinFET device; forming a first ultra-thin hardmask over the plurality of fins; implanting the first ultra-thin hardmask over a first set of fins from the plurality of fins; removing the first ultra-thin hardmask over a second set of fins from the plurality of fins untreated by the implant; forming an epitaxial (epi) layer over the second set of fins; forming a second ultra-thin hardmask over the FinFET device; implanting the second ultra-thin hardmask; removing the second ultra-thin hardmask over the first set of fins; and growing an epi layer over the first set of fins.