The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2015
Filed:
Oct. 28, 2013
Globalfoundries Inc., Grand Cayman, KY;
Andy Wei, Queensbury, NY (US);
Mariappan Hariharaputhiran, Ballston, NY (US);
Dae Geun Yang, Watervliet, NY (US);
Dae-Han Choi, Loudonville, NY (US);
Xiang Hu, Clifton Park, NY (US);
Richard J. Carter, Saratoga Springs, NY (US);
Akshey Sehgal, Malta, NY (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
Devices and methods for forming semiconductor devices with fins at tight fin pitches are provided. One method includes, for instance: obtaining an intermediate semiconductor device; growing an epi layer over the substrate; forming a doped layer below the epi layer; depositing a first oxide layer on the epi layer; applying a dielectric material on the first oxide layer; and depositing a lithography stack on the dielectric material. One intermediate semiconductor device includes, for instance: a substrate with at least one n-well region and at least one p-well region; a doped layer over the substrate; an epi layer over the doped layer; a first oxide layer over the epi layer; a dielectric layer over the first oxide layer; and a lithography stack over the dielectric layer.