Mariappan Hariharaputhiran

Title: Innovations of Mariappan Hariharaputhiran

Introduction

Mariappan Hariharaputhiran is a notable inventor based in Ballston Lake, NY (US). He has made significant contributions to the field of semiconductor technology, holding a total of five patents. His work focuses on enhancing the performance and efficiency of semiconductor devices.

Latest Patents

Among his latest patents is a semiconductor structure featuring a gap fill dielectric layer disposed between fins. This invention provides methods for removing fin portions from a finFET, starting with a high-K dielectric layer on a substrate. The process involves depositing a fin hardmask and lithography stack, exposing the hardmask, and removing portions to form fins. A gap fill dielectric is then deposited and recessed to improve device performance.

Another significant patent is related to a metal gate structure and its method of formation. This invention outlines a replacement metal gate (RMG) process flow, where the gate cut process occurs after the metal gate is formed. This approach reduces the margin between the gate and an adjacent fin, allowing for a thinner sacrificial layer on top of the dummy gate. The thinner layer enhances device quality by minimizing shadowing effects during implantation.

Career Highlights

Mariappan Hariharaputhiran is currently employed at Globalfoundries Inc., where he continues to innovate in semiconductor technology. His expertise and contributions have positioned him as a key figure in his field.

Collaborations

He has collaborated with notable coworkers, including Dae Geun Yang and Andy Chih-Hung Wei, further enhancing the innovative environment at Globalfoundries Inc.

Conclusion

Mariappan Hariharaputhiran's work in semiconductor technology exemplifies the impact of innovation on modern electronics. His patents reflect a commitment to advancing the field and improving device performance.