The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2015

Filed:

Nov. 11, 2013
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Xiang Hu, Clifton Park, NY (US);

Dae-Han Choi, Loudonville, NY (US);

Dae Geun Yang, Watervliet, NY (US);

Taejoon Han, Clifton Park, NY (US);

Andy Wei, Queensbury, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/30 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3086 (2013.01);
Abstract

Mask pattern formation is facilitated by: providing a mask structure including at least one sacrificial spacing structure disposed above a substrate structure; disposing a spacer layer conformally over the mask structure; selectively removing the spacer layer, leaving, at least in part, sidewall spacers along sidewalls of the at least one sacrificial spacing structure, and providing at least one additional sacrificial spacer over the substrate structure, one additional sacrificial spacer of the at least one additional sacrificial spacer being disposed in set spaced relation to the at least one sacrificial spacing structure; and removing the at least one sacrificial spacing structure, leaving the sidewall spacers and the at least one additional sacrificial spacer over the substrate structure as part of a mask pattern.


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