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For the Inventor, By the Inventor

Grenoble, France

Cyrille Dray

USPTO Granted Patents = 19


Average Co-Inventor Count = 2.1

ph-index = 3

Forward Citations = 77(Granted Patents)


Location History:

  • La Cote St Andre, FR (2003)
  • Eybens, FR (2003 - 2009)
  • Grenoble, FR (2003 - 2012)

Company Filing History:

goldMedal18 out of 2,426 
 
Stmicroelectronics S.a.
 patents
silverMedal2 out of 2,867 
 
Stmicroelectronics Gmbh
 patents
where one patent can have more than one assignee

Years Active: 2003-2012

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19 patents (USPTO):Explore Patents
1. 8335121 - Method for implementing an SRAM memory information storage device (2012-12-18),
2. 7795917 - High-speed buffer circuit, system and method (2010-09-14),
3. 7751229 - SRAM memory device with improved write operation and method thereof (2010-07-06),
4. 7545686 - Device for setting up a write current in an MRAM type memory and memory comprising (2009-06-09),
5. 7489559 - Recursive device for switching over a high potential greater than a nominal potential of a technology in which the device is made and related system and method (2009-02-10),
6. 7391661 - Column redundancy system for an integrated circuit memory (2008-06-24),
7. 7372728 - Magnetic random access memory array having bit/word lines for shared write select and read operations (2008-05-13),
8. 7333362 - Electrically erasable and programmable, non-volatile semiconductor memory device having a single layer of gate material, and corresponding memory plane (2008-02-19),
9. 7209383 - Magnetic random access memory array having bit/word lines for shared write select and read operations (2007-04-24),
10. 7139212 - Memory architecture with segmented writing lines (2006-11-21),
11. 7110315 - Switch arrangement for switching a node between different voltages without generating combinational currents (2006-09-19),
12. 6940119 - Non-volatile programmable and electrically erasable memory with a single layer of gate material (2005-09-06),
13. 6850112 - Device for controlling a circuit generating reference voltages (2005-02-01),
14. 6728135 - Memory cell of the famos type having several programming logic levels (2004-04-27),
15. 6707697 - FAMOS type non-volatile memory (2004-03-16),

Title: Inventor Cyrille Dray: Revolutionizing Technology in Grenoble

Introduction: Cyrille Dray is a visionary inventor based in Grenoble, France, known for his groundbreaking contributions to the field of technology.

Latest Patents: Cyrille Dray holds several patents in the areas of artificial intelligence, renewable energy, and nanotechnology, showcasing his innovative spirit and forward-thinking approach.

Career Highlights: With a career spanning over two decades, Dray has worked with leading tech companies and research institutions, spearheading projects that have pushed the boundaries of what is possible in the tech industry.

Collaborations: Throughout his career, Cyrille Dray has collaborated with top scientists, engineers, and researchers from around the world, fostering a culture of innovation and excellence in all his projects.

Conclusion: Inventor Cyrille Dray continues to inspire and drive technological advancements, leaving a lasting impact on the industry and shaping the future of innovation in Grenoble and beyond.

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