The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 2004
Filed:
Aug. 26, 2002
Applicant:
Inventors:
Assignee:
STMicroelectronics S.A., Montrouge, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 1/600 ;
U.S. Cl.
CPC ...
G11C 1/600 ;
Abstract
The FAMOS memory location comprises a single floating gate (GR) overlapping an active surface of a semiconductor substrate according to at least two asymmetrical overlap profiles (PF , PF ) so as to define at least two electrodes in the active region. Memory location programming means (MC, SW) are capable of selectively applying different predetermined sets of bias voltages to the electrodes so as to confer at least three programming logic levels on the memory location.