The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2004
Filed:
Apr. 19, 2002
Applicant:
Inventors:
Cyrille Dray, Grenoble, FR;
Richard Fournel, Lumbin, FR;
Assignee:
STMicroelectronics SA, Montrouge, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 1/700 ;
U.S. Cl.
CPC ...
G11C 1/700 ;
Abstract
An FAMOS memory includes memory cells, with each memory cell including an insulated gate transistor, and a first access transistor having a drain connected to a source of the insulated gate transistor. The FAMOS memory also includes an insulation transistor having a drain and a source respectively connected to the source of the insulated gate transistors of two adjacent cells of a same row. Each insulated gate transistor has a ring structure, and a ladder-shaped separation region insulates the cells of the same row.