The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2005
Filed:
Mar. 06, 2003
Applicants:
Cyrille Dray, Eybens, FR;
Phillipe Gendrier, Grenoble, FR;
Richard Fournel, Lumbin, FR;
Inventors:
Assignee:
STMicroelectronics SA, Montrouge, FR;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L029/76 ; H01L021/336 ;
U.S. Cl.
CPC ...
Abstract
The semiconducting memory device comprises a non-volatile programmable and electrically erasable memory cell with a single layer of grid material and comprising a floating grid transistor and a control grid, within an active semiconducting area formed in a region of the substrate and delimited by an isolation region. The layer of grid material EG, FL Pin which the floating grid FG is made extends integrall above the active area ZA without overlapping part of the isolation region STI, and the transistor is electrically isolated from the control grid CG by PN junctions that will be reverse biased.