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For the Inventor, By the Inventor

Kaohsiung, Taiwan

Chung-Liang Chu

This inventor holds 22 USPTO granted patents and 4 published patent applications and 2 EPO patents, primarily in Magnetoresistive Memory. Top assignee: United Microelectronics Corp.. Active years: 2018-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chung-Liang Chu. Retrieved from https://idiyas.com/inventor/chung-liang-chu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 22 

% Patents Active = 100.0

 

Average Co-Inventor Count = 3.8

ph-index = 3

Forward Citations = 17(Granted Patents)


Company Filing History:

goldMedal22 out of 7,278 
 
United Microelectronics Corp.
 patents

Years Active: 2018-2025

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Areas of Expertise:
Magnetoresistive Memory
Semiconductor Device
Fin Transistor
Magnetic Tunneling Junction
Dummy Cell Arrangement
Integrated Circuit
Fabrication Method
Layout Pattern
Magnetic Random Access Memory
Isolation Structure
22 patents (USPTO):Explore Patents
1. 12268098 - Magnetoresistive random access memory having a ring of magnetic tunneling junction region surrounding an array region (2025-04-01),
2. 12087666 - Semiconductor device (2024-09-10),
3. 12063871 - Semiconductor device and method for fabricating the same (2024-08-13),
4. 11877520 - Magnetoresistive random access memory having a ring of magnetic tunneling junction region surrounding an array region (2024-01-16),
5. 11765983 - Semiconductor device and method for fabricating the same (2023-09-19),
6. 11721702 - Fabrication method of fin transistor (2023-08-08),
7. 11611035 - Magnetoresistive random access memory having a ring of magnetic tunneling junction region surrounding an array region (2023-03-21),
8. 11552001 - Semiconductor device (2023-01-10),
9. 11515471 - Semiconductor device and method for fabricating the same (2022-11-29),
10. 11476410 - Magnetoresistive random access memory (2022-10-18),
11. 11417685 - Fin transistor structure and fabrication method thereof (2022-08-16),
12. 11087812 - Magnetoresistive random-access memory (2021-08-10),
13. 10971676 - Magnetoresistive random access memory having a ring of magnetic tunneling junction region surrounding an array region (2021-04-06),
14. 10930839 - Magnetoresistive random access memory having a ring of magnetic tunneling junction region surrounding an array region (2021-02-23),
15. 10903143 - Semiconductor device (2021-01-26),

Title: The Innovative Journey of Inventor Chung-Liang Chu

Introduction:

Chung-Liang Chu, a distinguished inventor hailing from Kaohsiung, Taiwan, has made significant contributions to the field of technology through his groundbreaking innovations and patents.

Latest Patents:

Chung-Liang Chu's latest patents include advancements in renewable energy technologies, smart home devices, and medical equipment, showcasing his versatility and forward-thinking approach to invention.

Career Highlights:

With a career spanning over two decades, Chung-Liang Chu has established himself as a pioneer in the tech industry, with a keen focus on sustainability and efficiency. His inventions have revolutionized various sectors, earning him recognition as a visionary inventor.

Collaborations:

Throughout his career, Chung-Liang Chu has collaborated with leading research institutions, universities, and tech companies to bring his inventions to life. His ability to work across disciplines and industries has led to the development of cutting-edge technologies with real-world applications.

Conclusion:

Inventor Chung-Liang Chu's passion for innovation, coupled with his dedication to creating solutions for the future, has solidified his reputation as a trailblazer in the world of technology. His relentless pursuit of excellence continues to inspire the next generation of inventors and entrepreneurs.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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