The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 18, 2022

Filed:

Aug. 19, 2020
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Yu-Chun Chen, Kaohsiung, TW;

Yen-Chun Liu, Kaohsiung, TW;

Ya-Sheng Feng, Tainan, TW;

Chiu-Jung Chiu, Tainan, TW;

I-Ming Tseng, Kaohsiung, TW;

Yi-An Shih, Changhua County, TW;

Yi-Hui Lee, Taipei, TW;

Chung-Liang Chu, Kaohsiung, TW;

Hsiu-Hao Hu, Keelung, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/02 (2006.01); H01L 43/12 (2006.01); H01L 27/22 (2006.01); H01L 43/10 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); H01L 27/222 (2013.01); H01L 43/12 (2013.01); H01L 43/10 (2013.01);
Abstract

A semiconductor device includes a substrate having a magnetic random access memory (MRAM) region and a logic region, a first metal interconnection on the MRAM region, a second metal interconnection on the logic region, a stop layer extending from the first metal interconnection to the second metal interconnection, and a magnetic tunneling junction (MTJ) on the first metal interconnection. Preferably, the stop layer on the first metal interconnection and the stop layer on the second metal interconnection have different thicknesses.


Find Patent Forward Citations

Loading…