The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2024
Filed:
Aug. 04, 2023
United Microelectronics Corp., Hsin-Chu, TW;
Chiu-Jung Chiu, Tainan, TW;
Ya-Sheng Feng, Tainan, TW;
I-Ming Tseng, Kaohsiung, TW;
Yi-An Shih, Changhua County, TW;
Yu-Chun Chen, Kaohsiung, TW;
Yi-Hui Lee, Taipei, TW;
Chung-Liang Chu, Kaohsiung, TW;
Hsiu-Hao Hu, Keelung, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A method for fabricating semiconductor device includes the steps of forming an inter-metal dielectric (IMD) layer on a substrate, forming a trench in the IMD layer, forming a synthetic antiferromagnetic (SAF) layer in the trench, forming a metal layer on the SAF layer, planarizing the metal layer and the SAF layer to form a metal interconnection, and forming a magnetic tunneling junction (MTJ) on the metal interconnection.