The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 10, 2024

Filed:

Dec. 07, 2022
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Chung-Liang Chu, Kaohsiung, TW;

Yu-Ruei Chen, New Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 29/78 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 29/785 (2013.01); H01L 21/823431 (2013.01); H01L 21/823475 (2013.01); H01L 21/823821 (2013.01); H01L 21/823871 (2013.01);
Abstract

A semiconductor device includes a substrate, an isolation structure, a first gate structure, a second gate structure, a first slot contact structure, a first gate contact structure, and a second gate contact structure. The substrate includes a first active region and a second active region elongated in a first direction respectively. The first gate structure, the second gate structure, and the first slot contact structure are continuously elongated in a second direction respectively. The first gate contact structure and the second gate contact structure are disposed at two opposite sides of the first slot contact structure in the first direction respectively.


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