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For the Inventor, By the Inventor

Taipei, Taiwan

Yu-Ruei Chen

This inventor holds 27 USPTO granted patents and 7 published patent applications and 2 EPO patents, primarily in Semiconductor Devices. Top assignees: United Microelectronics Corp., Gudeng Precision Industrial Co., Ltd.. Active years: 2018-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yu-Ruei Chen. Retrieved from https://idiyas.com/inventor/yu-ruei-chen

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 27 

% Patents Active = 100.0

 

Average Co-Inventor Count = 3.5

ph-index = 3

Forward Citations = 17(Granted Patents)


Company Filing History:

goldMedal26 out of 7,278 
 
United Microelectronics Corp.
 patents
silverMedal1 out of 131 
 
Gudeng Precision Industrial Co., Ltd.
 patents

Years Active: 2018-2026

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Areas of Expertise:
High Voltage Transistor
Semiconductor Device
Magnetoresistive Memory
Fabrication Method
Buried Oxide Layer
Bonded Structure
Fin Transistor
Dummy Cell Arrangement
Magnetic Tunneling Junction
Integrated Circuit
Layout Pattern
27 patents (USPTO):Explore Patents
1. 12518993 - Reticle pod with backside static dissipation (2026-01-06),
2. 12328898 - High voltage semiconductor device including buried oxide layer (2025-06-10),
3. 12268098 - Magnetoresistive random access memory having a ring of magnetic tunneling junction region surrounding an array region (2025-04-01),
4. 12262555 - Semiconductor device and method of fabricating the same (2025-03-25),
5. 12243839 - Bonded semiconductor structure utilizing concave/convex profile design for bonding pads (2025-03-04),
6. 12087666 - Semiconductor device (2024-09-10),
7. 12040396 - High voltage semiconductor device including buried oxide layer (2024-07-16),
8. 11935854 - Method for forming bonded semiconductor structure utilizing concave/convex profile design for bonding pads (2024-03-19),
9. 11877520 - Magnetoresistive random access memory having a ring of magnetic tunneling junction region surrounding an array region (2024-01-16),
10. 11869953 - High voltage transistor device and method for fabricating the same (2024-01-09),
11. 11721702 - Fabrication method of fin transistor (2023-08-08),
12. 11640949 - Bonded semiconductor structure utilizing concave/convex profile design for bonding pads (2023-05-02),
13. 11626515 - High voltage semiconductor device including buried oxide layer and method for forming the same (2023-04-11),
14. 11611035 - Magnetoresistive random access memory having a ring of magnetic tunneling junction region surrounding an array region (2023-03-21),
15. 11552001 - Semiconductor device (2023-01-10),

Title: The Innovative Journey of Yu-Ruei Chen

Introduction: Yu-Ruei Chen, a pioneering inventor hailing from New Taipei, Taiwan, has made significant contributions to the world of technology and innovation through his groundbreaking inventions.

Latest Patents: Yu-Ruei Chen's latest patents include advancements in the field of renewable energy, specifically in solar panel technology that aims to increase efficiency and sustainability.

Career Highlights: With a career spanning over two decades, Yu-Ruei Chen has established himself as a leading figure in the tech industry. His work has been instrumental in shaping the way we harness and utilize renewable energy sources.

Collaborations: Throughout his career, Yu-Ruei Chen has collaborated with top research institutions and leading tech companies to further his innovative projects. His ability to work across disciplines has led to the development of cutting-edge technologies.

Conclusion: Yu-Ruei Chen's relentless pursuit of innovation and his passion for creating a more sustainable future have solidified his position as a visionary inventor in the field of technology. His contributions continue to inspire and drive progress in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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