The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 04, 2025

Filed:

Feb. 02, 2024
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Chung-Sung Chiang, Kaohsiung, TW;

Chia-Wei Liu, Tainan, TW;

Yu-Ruei Chen, New Taipei, TW;

Yu-Hsiang Lin, New Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/48 (2006.01); H01L 23/488 (2006.01); H01L 23/532 (2006.01); H01L 25/065 (2023.01);
U.S. Cl.
CPC ...
H01L 24/06 (2013.01); H01L 23/488 (2013.01); H01L 23/53228 (2013.01); H01L 25/0655 (2013.01);
Abstract

A bonded semiconductor structure includes a first device wafer and a second device wafer. The first device includes a first dielectric layer, a first bonding pad disposed in the first dielectric layer, and a first bonding layer on the first dielectric layer. The second device wafer includes a second dielectric layer, a second bonding layer on the second dielectric layer, and a second bonding pad disposed in the second dielectric layer and extending through the second bonding layer and at least a portion of the first bonding layer. A conductive bonding interface between the first bonding pad and the second bonding pad and a dielectric bonding interface between the first bonding layer and the second bonding layer include a step-height in a direction perpendicular to the dielectric bonding interface and the conductive bonding interface.


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