The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2021
Filed:
Jul. 16, 2020
United Microelectronics Corp., Hsin-Chu, TW;
Yi-Hui Lee, Taipei, TW;
I-Ming Tseng, Kaohsiung, TW;
Chiu-Jung Chiu, Tainan, TW;
Chung-Liang Chu, Kaohsiung, TW;
Yu-Chun Chen, Kaohsiung, TW;
Ya-Sheng Feng, Tainan, TW;
Yi-An Shih, Changhua County, TW;
Hsiu-Hao Hu, Keelung, TW;
Yu-Ping Wang, Hsinchu, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A MRAM includes a plurality of memory cells, an operation unit, a voltage generator, and an input/output circuit. The operation unit includes multiple groups of memory cells among the plurality of memory cells. The voltage generator is configured to provide a plurality of control signals by voltage-dividing a voltage control signal and selectively output the plurality of control signals to the input/output circuit. The input/output circuit is configured to output a plurality of switching pulse signals to the multiple groups of memory cells according to the plurality of control signals, wherein each switching pulse signal differs in pulse width or level.