Wuhan, China

Chun Yuan Hou

USPTO Granted Patents = 9 

 

Average Co-Inventor Count = 2.3

ph-index = 2

Forward Citations = 17(Granted Patents)


Company Filing History:


Years Active: 2020-2024

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9 patents (USPTO):Explore Patents

Title: **Innovative Mind: Chun Yuan Hou**

Introduction

Chun Yuan Hou, an esteemed inventor based in Wuhan, China, has made significant contributions to the field of memory device technology. With a remarkable portfolio of 9 patents, he has become a pivotal figure in developing advanced memory systems.

Latest Patents

Chun Yuan Hou's latest patents showcase his expertise in three-dimensional (3D) memory devices. One of his notable innovations is titled "Cache program operation of three-dimensional memory device with static random-access memory." This invention involves a 3D NAND memory array coupled with on-die static random-access memory (SRAM) and peripheral circuits, all formed on the same chip. The controller in this device is adept at managing program data, ensuring that in situations where programming to the 3D NAND memory array fails, the backup copy of the program data can be seamlessly transmitted from the on-die SRAM to the page buffer for programming.

Another significant invention is "Data buffering operation of three-dimensional memory device with static random-access memory." This patent describes a 3D memory device that includes an array of 3D NAND memory cells, SRAM cells, and a peripheral circuit designed to enhance data processing. Data received from a host is buffered in SRAM cells before being programmed into the 3D NAND memory cells, exemplifying the integration of efficient data handling within these devices.

Career Highlights

Chun Yuan Hou is associated with Yangtze Memory Technologies Co., Ltd., where he plays a crucial role in driving innovation in memory technology. His work has been essential in pushing the boundaries of what is possible in memory devices, particularly in enhancing their performance and reliability.

Collaborations

At Yangtze Memory Technologies Co., Ltd., Chun collaborates with talented professionals, including Yue Ping Li and Wei Jun Wan, to advance their research and development efforts. The collaborative environment fosters creativity and innovation, enabling the team to produce groundbreaking technologies in the field of memory devices.

Conclusion

Chun Yuan Hou's inventiveness and dedication to innovation make him a standout figure in the memory technology landscape. His contributions not only advance technological capabilities but also pave the way for future advancements in the industry. As innovations continue to evolve, inventors like Chun are instrumental in shaping the future of technology.

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