The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 09, 2021

Filed:

May. 12, 2019
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Ke Liang, Wuhan, CN;

Chun Yuan Hou, Wuhan, CN;

Qiang Tang, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 11/56 (2006.01); G11C 16/10 (2006.01); G11C 16/08 (2006.01); G11C 16/34 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
G11C 11/5628 (2013.01); G11C 16/08 (2013.01); G11C 16/10 (2013.01); G11C 16/3459 (2013.01); G11C 16/0483 (2013.01);
Abstract

A memory system comprising a plurality of memory cells each including a storage element having a first terminal and a control terminal. The method for operating the memory system includes applying a first program voltage to control terminals of storage elements and applying a basic reference voltage to first terminals of the storage elements during a first program operation, performing a group verification by comparing threshold voltages of the storage elements with a middle voltage, performing a first program test to check if the threshold voltages of the storage elements are greater than a first programming threshold voltage, and performing a second program operation according to a result of the group verification and a result of the first program test. The middle voltage is smaller than the first programming threshold voltage.


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