The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 11, 2022

Filed:

Aug. 16, 2019
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Yue Ping Li, Wuhan, CN;

Wei Jun Wan, Wuhan, CN;

Chun Yuan Hou, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 3/06 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0656 (2013.01); G06F 3/0604 (2013.01); G06F 3/0679 (2013.01);
Abstract

Embodiments of three-dimensional (3D) memory devices with a 3D NAND memory array having a plurality of pages and an on-die data buffer coupled to the memory array on a same chip and configured to buffer a plurality of batches of program data between a host and the memory array. The on-die data buffer may include SRAM cells. The 3D memory device also includes a controller coupled to the on-die data buffer on the same chip. The controller may be configured to receive control instructions for performing a first pass program and a second pass program on memory cells in a page. The controller may also be configured to buffer, in the on-die data buffer, first program data for a first pass program and second program data for a second pass program from a host and retrieve the first program data from the on-die data buffer.


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