Wuhan, China

Wei Jun Wan

USPTO Granted Patents = 3 

 

Average Co-Inventor Count = 1.8

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2021-2024

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3 patents (USPTO):Explore Patents

Title: **Innovations of Wei Jun Wan: A Pioneer in Three-Dimensional Memory Technology**

Introduction

Wei Jun Wan, an esteemed inventor based in Wuhan, China, has made notable contributions to the field of memory technology. With an impressive portfolio comprising three patents, Wan specializes in the intricacies of three-dimensional (3D) memory devices, particularly focusing on static random-access memory (SRAM) and NAND memory cell integration.

Latest Patents

Wei Jun Wan's latest innovations include groundbreaking patents that enhance the functionality of 3D memory devices. One patent details the data buffering operation of a three-dimensional memory device with SRAM. This invention outlines a novel approach where an array of 3D NAND memory cells is integrated with SRAM cells and a peripheral circuit on a single chip. The configuration allows for efficient data transmission from a host, utilizing the SRAM array for buffering before programming the data into the NAND memory cells.

Another notable patent by Wan addresses the on-die data buffering operation of 3D memory devices. This patent describes a system featuring a 3D NAND memory array that supports multiple pages and an integrated data buffer designed to manage several batches of programming data. The innovation showcases the controller's capability to optimize programming tasks, improving performance and efficiency in data handling.

Career Highlights

Wei Jun Wan is currently employed at Yangtze Memory Technologies Co., Ltd., a company recognized for its leadership in memory technology development. His work there has not only led to the creation of cutting-edge memory solutions but has also established the company as a key player in the global semiconductor industry.

Collaborations

Throughout his career, Wei Jun Wan has collaborated with talented professionals in the field, including coworkers such as Yue Ping Li and Chun Yuan Hou. These collaborations have driven forward the innovative ideas that have culminated in his patents, fostering an environment of creativity and technological advancement within his team.

Conclusion

Wei Jun Wan stands out as a significant figure in the realm of memory technology innovations. His inventions, particularly in the development of 3D memory devices, exemplify the intersection of engineering knowledge and practical application. With ongoing advancements and collaborations, Wan remains a pivotal force in shaping the future of memory technology.

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