The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2023
Filed:
Nov. 08, 2021
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Yue Ping Li, Wuhan, CN;
Chun Yuan Hou, Wuhan, CN;
YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;
Abstract
Embodiments of 3D memory devices with a static random-access memory (SRAM) and fabrication methods thereof are disclosed herein. In certain embodiments, the 3D memory device includes a first semiconductor structure and a second semiconductor structure. The first semiconductor structure includes an array of SRAM cells and a first bonding layer, and the second semiconductor structure includes an array of 3D NAND memory strings and a second bonding layer. The first semiconductor structure is attached with the second semiconductor structure through the first bonding layer and the second bonding layer. The array of 3D NAND memory strings and the array of SRAM cells are coupled through a plurality of bonding contacts in the first bonding layer and the second bonding layer and are arranged at opposite sides of the plurality of bonding contacts.