Taichung, Taiwan

Chun-Sheng Lu

USPTO Granted Patents = 7 

Average Co-Inventor Count = 4.3

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2021-2024

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7 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Chun-Sheng Lu

Introduction

Chun-Sheng Lu is a prominent inventor based in Taichung, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 7 patents. His work focuses on advanced manufacturing methods that enhance the performance and efficiency of memory devices.

Latest Patents

Chun-Sheng Lu's latest patents include an innovative isolation structure and a manufacturing method for memory devices. The isolation structure patent describes a method for forming an isolation structure that involves creating a trench in a substrate, applying a mask pattern, and filling it with isolation materials. This process includes several steps such as ion implantation and plasma treatment to ensure the formation of a protective layer. The manufacturing method for memory devices outlines a series of steps to create a gate stacking structure, including the formation of insulating layers and a patterning process that utilizes a doped portion of a mask material layer.

Career Highlights

Chun-Sheng Lu is currently employed at Winbond Electronics Corporation, where he continues to innovate in the semiconductor industry. His expertise in manufacturing methods has positioned him as a key player in the development of advanced memory technologies.

Collaborations

Chun-Sheng Lu has collaborated with notable colleagues such as Che-Jui Hsu and Ying-Fu Tung. Their combined efforts contribute to the advancement of semiconductor technologies and the successful implementation of innovative manufacturing processes.

Conclusion

Chun-Sheng Lu's contributions to the field of semiconductor technology through his patents and work at Winbond Electronics Corporation highlight his role as a leading inventor. His innovative methods continue to shape the future of memory device manufacturing.

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