The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2024
Filed:
Dec. 15, 2022
Winbond Electronics Corp., Taichung, TW;
Che-Jui Hsu, Taichung, TW;
Ying-Fu Tung, Taichung, TW;
Chun-Sheng Lu, Taichung, TW;
Kuo-Feng Huang, Taichung, TW;
Yu-Chi Kuo, Taichung, TW;
Wang-Ta Li, Taichung, TW;
Winbond Electronics Corp., Taichung, TW;
Abstract
A manufacturing method of a memory device are provided. The method includes following steps. A gate stacking structure is formed over a substrate. A first insulating layer, a second insulating layer and a mask material layer are sequentially formed over the substrate to cover the gate stacking structure. An ion implantation process is performed on the mask material layer to form a doped portion in the mask material layer. The doped portion caps on a top portion of the gate stacking structure. A first patterning process is performed on the mask material layer using the doped portion as a shadow mask to remove a bottom portion of the mask material layer extending along a surface of the substrate. A second patterning process is performed to remove the doped portion of the mask material layer and an exposed bottom portion of the second insulating layer surrounding the gate stacking structure.