Kuo-Feng Huang

Title: Kuo-Feng Huang: Innovator in Memory Device Technology

Introduction

Kuo-Feng Huang is a prominent inventor based in Taichung, Taiwan. He has made significant contributions to the field of memory device technology, holding a total of 2 patents. His innovative approaches have paved the way for advancements in manufacturing methods for memory devices.

Latest Patents

Huang's latest patents include a manufacturing method of a memory device. This method involves several steps, including the formation of a gate stacking structure over a substrate. A first insulating layer, a second insulating layer, and a mask material layer are sequentially formed to cover the gate stacking structure. An ion implantation process is then performed on the mask material layer to create a doped portion that caps the top of the gate stacking structure. Following this, a first patterning process is executed using the doped portion as a shadow mask to remove the bottom portion of the mask material layer. A second patterning process is also performed to eliminate the doped portion and the exposed bottom portion of the second insulating layer surrounding the gate stacking structure.

Another patent focuses on a memory device and its manufacturing method. This device includes a gate stacking structure, a first insulating layer, a second insulating layer, and a first spacer. The gate stacking structure is positioned over a substrate, with the first insulating layer covering its top surface and sidewall. The second insulating layer covers the first insulating layer, while the first spacer is located on the sidewall of the gate stacking structure, ensuring that its topmost end is lower than the topmost surface of the second insulating layer.

Career Highlights

Kuo-Feng Huang is currently employed at Winbond Electronics Corporation, where he continues to innovate in the field of memory devices. His work has been instrumental in enhancing the efficiency and effectiveness of memory technology.

Collaborations

Huang collaborates with notable colleagues, including Che-Jui Hsu and Ying-Fu Tung, who contribute to his research and development efforts.

Conclusion

Kuo-Feng Huang's contributions to memory device technology through his patents and work at Winbond Electronics Corporation highlight his role as a key innovator in the field. His advancements are set to influence the future of memory devices significantly.