The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 30, 2024

Filed:

Oct. 12, 2021
Applicant:

Winbond Electronics Corp., Taichung, TW;

Inventors:

Che-Jui Hsu, Taichung, TW;

Ying-Fu Tung, Taichung, TW;

Chun-Sheng Lu, Taichung, TW;

Mu-Lin Li, Taichung, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 21/311 (2006.01); H01L 21/3115 (2006.01); H10B 41/30 (2023.01);
U.S. Cl.
CPC ...
H01L 21/76224 (2013.01); H01L 21/31111 (2013.01); H01L 21/31155 (2013.01); H01L 21/76205 (2013.01); H10B 41/30 (2023.02);
Abstract

A method for forming an isolation structure includes: forming a trench at a surface of a substrate; forming a mask pattern on the substrate, wherein the mask pattern has an opening communicated with the trench; filling a first isolation material layer in the opening and the trench, wherein a surface of the first isolation material layer defines a first recess; filling a second isolation material layer into the first recess; partially removing the first and second isolation material layers, to form a second recess, performing first and second oblique ion implantation processes, to form damage regions in the first isolation material layer; performing a decoupled plasma treatment, to transform portions of the damage regions into a protection layer having etching selectivity with respect to the damage regions; and removing the damage regions.


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