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For the Inventor, By the Inventor

Villach, Austria

Cedric Ouvrard

USPTO Granted Patents = 22 

 

Average Co-Inventor Count = 3.9

ph-index = 3

Forward Citations = 22(Granted Patents)


Location History:

  • Villach, AT (2015 - 2020)
  • Munich, DE (2021 - 2022)

Company Filing History:

goldMedal19 out of 2,093 
 
Infineon Technologies Austria Ag
 patents
silverMedal3 out of 14,705 
 
Infineon Technologies Ag
 patents
bronzeMedal1 out of 278 
 
Infineon Technologies Americas Corp.
 patents
where one patent can have more than one assignee

Years Active: 2015-2022

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22 patents (USPTO):
1. 11296218 - Semiconductor device (2022-04-05),
2. 11158735 - Charge compensation MOSFET with graded epi profile and methods of manufacturing thereof (2021-10-26),
3. 10879363 - Needle cell trench MOSFET (2020-12-29),
4. 10872957 - Semiconductor device with needle-shaped field plate structures (2020-12-22),
5. 10868173 - Semiconductor device having an edge termination area with trench electrodes at different electric potentials, and method for manufacturing thereof (2020-12-15),
6. 10811531 - Transistor device with gate resistor (2020-10-20),
7. 10727331 - Semiconductor device having a reduced surface doping in an edge termination area, and method for manufacturing thereof (2020-07-28),
8. 10629595 - Power semiconductor device having different gate crossings, and method for manufacturing thereof (2020-04-21),
9. 10573731 - Semiconductor transistor and method for forming the semiconductor transistor (2020-02-25),
10. 10510846 - Semiconductor device with needle-shaped field plate structures in a transistor cell region and in an inner termination region (2019-12-17),
11. 10453929 - Methods of manufacturing a power MOSFET (2019-10-22),
12. 10269953 - Semiconductor device having a trench gate (2019-04-23),
13. 10205015 - Reduced gate charge field-effect transistor (2019-02-12),
14. 10050113 - Semiconductor device with needle-shaped field plates and a gate structure with edge and node portions (2018-08-14),
15. 9865726 - Method of manufacturing a semiconductor device with trench gate by using a screen oxide layer (2018-01-09),

Title: The Innovative Journey of Cedric Ouvrard

Introduction:

Cedric Ouvrard, a talented inventor hailing from Villach, Austria, has made significant contributions to the world of technology through his groundbreaking innovations.

Latest Patents:

Cedric Ouvrard's latest patents include cutting-edge advancements in renewable energy technology, smart home devices, and sustainable transportation solutions.

Career Highlights:

With a career spanning over two decades, Cedric Ouvrard has established himself as a visionary in the field of engineering. His work has been recognized globally for its impact on improving efficiency and sustainability in various industries.

Collaborations:

Throughout his career, Cedric Ouvrard has collaborated with leading research institutions, universities, and tech companies to bring his inventions to life. His ability to work in multidisciplinary teams has led to the successful development of innovative products.

Conclusion:

In conclusion, Cedric Ouvrard's passion for innovation and dedication to creating a better future through technology make him a true pioneer in the world of inventions. His continued efforts to push the boundaries of what is possible serve as an inspiration to aspiring inventors worldwide.

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