The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 14, 2018

Filed:

Feb. 23, 2017
Applicant:

Infineon Technologies Austria Ag, Villach, AT;

Inventors:

Ralf Siemieniec, Villach, AT;

Oliver Blank, Villach, AT;

David Laforet, Villach, AT;

Cedric Ouvrard, Villach, AT;

Li Juin Yip, Villach, AT;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 29/423 (2006.01); H01L 29/06 (2006.01); H01L 29/73 (2006.01); H01L 29/78 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 29/407 (2013.01); H01L 29/0696 (2013.01); H01L 29/404 (2013.01); H01L 29/4236 (2013.01); H01L 29/4238 (2013.01); H01L 29/7813 (2013.01); H01L 29/7391 (2013.01); H01L 29/7397 (2013.01); H01L 29/7827 (2013.01);
Abstract

A semiconductor device includes needle-shaped field plate structures extending from a first surface into transistor sections of a semiconductor portion in a transistor cell area. A grid structure separates the transistor sections from each other. The grid structure includes: stripe-shaped gate edge portions extending along one edge of the transistor sections, respectively; gate node portions wider than the gate edge portions and connecting two or more of the gate edge portions, respectively; and one or more connection sections of the semiconductor portion, wherein the one or more connection sections extend between neighboring transistor sections.


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