The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2019
Filed:
May. 02, 2017
Infineon Technologies Austria Ag, Villach, AT;
David Laforet, Villach, AT;
Oliver Blank, Villach, AT;
Michael Hutzler, Villach, AT;
Cedric Ouvrard, Villach, AT;
Ralf Siemieniec, Villach, AT;
Li Juin Yip, Villach, AT;
Infineon Technologies Austria AG, Villach, AT;
Abstract
A method of manufacturing a power metal oxide semiconductor field effect transistor includes: forming a field electrode in a field plate trench in a main surface of a semiconductor substrate; forming a gate trench in the main surface, the gate trench extending in a first direction parallel to the main surface; and for a gate electrode in the gate trench, the gate electrode being made of a gate electrode material that comprises a metal. The field plate trench is formed to have an extension length in the first direction which is less than double of an extension length of the field plate trench in a second direction, the second direction being perpendicular to the first direction.