The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2018
Filed:
Oct. 13, 2016
Applicant:
Infineon Technologies Austria Ag, Villach, AT;
Inventors:
David Laforet, Villach, AT;
Cedric Ouvrard, Villach, AT;
Assignee:
Infineon Technologies Austria AG, Villach, AT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 21/265 (2006.01); H01L 21/28 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7813 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/02238 (2013.01); H01L 21/26513 (2013.01); H01L 21/28211 (2013.01); H01L 29/0696 (2013.01); H01L 29/0847 (2013.01); H01L 29/1095 (2013.01); H01L 29/404 (2013.01); H01L 29/407 (2013.01); H01L 29/4236 (2013.01); H01L 29/66348 (2013.01); H01L 29/66734 (2013.01); H01L 29/7397 (2013.01); H01L 29/7811 (2013.01); H01L 21/02255 (2013.01); H01L 29/0878 (2013.01); H01L 29/41766 (2013.01); H01L 29/4238 (2013.01);
Abstract
A screen oxide layer is formed on a main surface of a semiconductor layer and a passivation layer is formed on the screen oxide layer. A gate trench is formed in a portion of the semiconductor layer exposed by a mask opening in a trench mask that comprises the passivation layer. A gate dielectric is formed at least along sidewalls of the gate trench. After removing the passivation layer, dopants are implanted through the screen oxide layer to form at least one of a source zone and a body zone in the semiconductor layer.