The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2020
Filed:
Jun. 27, 2018
Infineon Technologies Austria Ag, Villach, AT;
Cedric Ouvrard, Villach, AT;
Cesar Augusto Braz, Villach, AT;
Olivier Guillemant, Villach, AT;
David Laforet, Villach, AT;
Gerhard Noebauer, Villach, AT;
Li Juin Yip, Villach, AT;
Infineon Technologies Austria AG, Villach, AT;
Abstract
A power semiconductor device includes a semiconductor substrate having a first side. A plurality of active transistor cells is formed in an active area of the semiconductor substrate. Each of the plurality of active transistor cells includes a spicular trench which extends from the first side into the semiconductor substrate and has a field electrode. A gate electrode structure has a plurality of intersecting gate trenches running between the spicular trenches. The intersecting gate trenches form gate crossing regions of different shape when seen in a plan projection onto the first side of the power semiconductor device.