The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2020
Filed:
Mar. 14, 2017
Infineon Technologies Austria Ag, Villach, AT;
Li Juin Yip, Villach, AT;
Cesar Augusto Braz, Villach, AT;
Olivier Guillemant, Villach, AT;
David Laforet, Villach, AT;
Cedric Ouvrard, Villach, AT;
Infineon Technologies Austria AG, Villach, AT;
Abstract
A vertical semiconductor field-effect transistor includes a semiconductor body having a front side, and a field electrode trench extending from the front side into the semiconductor body. The field electrode trench includes a field electrode and a field dielectric arranged between the field electrode and the semiconductor body. The vertical semiconductor field-effect transistor further includes a gate electrode trench arranged next to the field electrode trench, extending from the front side into the semiconductor body, and having two electrodes which are separated from each other and the semiconductor body. A front side metallization is arranged on the front side and in contact with the field electrode and at most one of the two electrodes.