The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2022
Filed:
May. 13, 2020
Infineon Technologies Austria Ag, Villach, AT;
Ralf Siemieniec, Villach, AT;
Adam Amali, Chandler, AZ (US);
Michael Hutzler, Villach, AT;
Laszlo Juhasz, Villach, AT;
David Laforet, Villach, AT;
Cedric Ouvrard, Munich, DE;
Li Juin Yip, Villach, AT;
Infineon Technologies Austria AG, Villach, AT;
Infineon Technologies Americas Corp., El Segundo, CA (US);
Abstract
A semiconductor device includes a semiconductor body having first and second opposing surfaces, an active area including active transistor cells, and an edge termination region laterally surrounding the active area. Each active transistor cell includes a mesa and a columnar trench having a field plate. The edge termination region includes inactive cells each including a columnar termination trench having a field plate, and a termination mesa including a drift region of a first conductivity type. The edge termination region includes a transition region laterally surrounding the active region and an outer termination region laterally surrounding the transition region. In the transition region, the termination mesa includes a body region of a second conductivity type arranged on the drift region. In the outer termination region, the drift region extends to the first surface. A buried doped region of the edge termination region is positioned in the transition and outer termination regions.