Bor-Wen Chan

This inventor holds 31 USPTO granted patents, primarily in Semiconductor Manufacturing. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2001-2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Bor-Wen Chan. Retrieved from https://idiyas.com/inventor/bor-wen-chan

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 31

% Patents Active = 64.5

Average Co-Inventor Count = 2.6

ph-index = 9

Forward Citations = 703(Granted Patents)

Company Filing History:

31 out of 42,872

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

Years Active: 2001-2018

Loading Chart...

Areas of Expertise:

Silicide Regions

MOS Devices

FinFET Devices

Metal Gate Fill

CMOS Structure

Stacked Capacitor

Microelectronic Device

Plasma Process

Photo Lithography

Transistor Fabrication

Critical Dimension

Blocking Structure

31 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9947758 - Forming silicide regions and resulting MOS devices (2018-04-17),

2. 9899494 - Methods of forming silicide regions and resulting MOS devices (2018-02-20),

3. 8841192 - Methods of forming silicide regions and resulting MOS devices (2014-09-23),

4. 8785313 - Method of manufacturing device having a blocking structure (2014-07-22),

5. 8564072 - Semiconductor device having a blocking structure and method of manufacturing the same (2013-10-22),

6. 8513107 - Replacement gate FinFET devices and methods for forming the same (2013-08-20),

7. 8357603 - Metal gate fill and method of making (2013-01-22),

8. 8299508 - CMOS structure with multiple spacers (2012-10-30),

9. 8173540 - Methods of forming silicide regions and resulting MOS devices (2012-05-08),

10. 8093117 - Method of forming a metal gate (2012-01-10),

11. 7354847 - Method of trimming technology (2008-04-08),

12. 7241674 - Method of forming silicided gate structure (2007-07-10),

13. 7202172 - Microelectronic device having disposable spacer (2007-04-10),

14. 7195969 - Strained channel CMOS device with fully silicided gate electrode (2007-03-27),

15. 7122484 - Process for removing organic materials during formation of a metal interconnect (2006-10-17),

Title: The Innovative Journey of Inventor Bor-Wen Chan

Introduction: Bor-Wen Chan, a talented male inventor hailing from Hsin-Chu, Taiwan, has made significant contributions to the field of innovations and patents with his groundbreaking ideas and creations.

Latest Patents: Bor-Wen Chan holds several patents in various technological fields, including semiconductor devices, nanotechnology applications, and renewable energy solutions. His recent patents showcase his continuous dedication to pushing the boundaries of innovation.

Career Highlights: Throughout his illustrious career, Bor-Wen Chan has worked with renowned research institutions and leading technology companies to bring his inventions to life. His innovative spirit and commitment to excellence have earned him recognition as a pioneer in the industry.

Collaborations: Bor-Wen Chan has collaborated with top engineers, scientists, and researchers from around the world to develop cutting-edge technologies that have the potential to revolutionize the way we live and work. His collaborative efforts have led to the creation of groundbreaking solutions that address some of the most pressing challenges of our time.

Conclusion: In conclusion, Bor-Wen Chan's passion for innovation and his relentless pursuit of excellence have established him as a visionary inventor in the world of patents and inventions. His remarkable achievements continue to inspire the next generation of inventors to dream big and push the boundaries of what is possible in the realm of technology.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]