The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2012
Filed:
Jan. 14, 2010
Hsueh Wen Tsau, Zhunan Township, Miaoli County, TW;
Kuang-yuan Hsu, Fongyuan, TW;
Bor-wen Chan, Hsin-Chu, TW;
Hsueh Wen Tsau, Zhunan Township, Miaoli County, TW;
Kuang-Yuan Hsu, Fongyuan, TW;
Bor-Wen Chan, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
The present disclosure provides a method of fabricating a semiconductor device. The method includes providing a substrate. A dummy gate is formed over the substrate. A dielectric material is formed around the dummy gate. The dummy gate is then removed to form an opening in the dielectric material. Thereafter, a work function metal layer is formed to partially fill the opening. The remainder of the opening is then filled with a conductive layer using one of a polysilicon substitute method and a spin coating method.