The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2018
Filed:
Oct. 18, 2016
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Tan-Chen Lee, San Jose, CA (US);
Bor-Wen Chan, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/49 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 29/456 (2013.01); H01L 29/0649 (2013.01); H01L 29/0847 (2013.01); H01L 29/4975 (2013.01); H01L 29/665 (2013.01); H01L 29/6656 (2013.01); H01L 29/6659 (2013.01); H01L 29/66507 (2013.01); H01L 29/66545 (2013.01); H01L 29/66606 (2013.01); H01L 29/7833 (2013.01); H01L 21/823814 (2013.01); H01L 21/823835 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A semiconductor device with improved roll-off resistivity and reliability are provided. The semiconductor device includes a gate dielectric overlying a semiconductor substrate, a gate electrode overlying the gate dielectric, a gate silicide region on the gate electrode, a source/drain region adjacent the gate dielectric, and a source/drain silicide region on the source/drain region, wherein the source/drain silicide region and the gate silicide region have different metal compositions.