The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2012
Filed:
Apr. 09, 2010
Applicants:
Bor Chiuan Hsieh, Taoyuan, TW;
Han-ping Chung, Fongshan, TW;
Chih-hsin Ko, Fongshan, TW;
Bor-wen Chan, Hsinchu, TW;
Hun-jan Tao, Hsinchu, TW;
Inventors:
Bor Chiuan Hsieh, Taoyuan, TW;
Han-Ping Chung, Fongshan, TW;
Chih-Hsin Ko, Fongshan, TW;
Bor-Wen Chan, Hsinchu, TW;
Hun-Jan Tao, Hsinchu, TW;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device includes a substrate having shallow trench isolation and source/drain regions located therein, a gate stack located on the substrate between the source/drain regions, a first gate spacer on the sidewall of the gate stack, and a second gate spacer on the sidewall of the first gate spacer.