The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2008
Filed:
Jan. 26, 2004
Bor-wen Chan, Hsin chu, TW;
Yi-chun Huang, Pingjhen, TW;
Baw-ching Perng, Hsin-Chu, TW;
Hun-jan Tao, Hsin chu, TW;
Bor-Wen Chan, Hsin chu, TW;
Yi-Chun Huang, Pingjhen, TW;
Baw-Ching Perng, Hsin-Chu, TW;
Hun-Jan Tao, Hsin chu, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
A process for trimming a photoresist layer during the fabrication of a gate electrode in a MOSFET is described. A bilayer stack with a top photoresist layer on a thicker organic underlayer is patternwise exposed with 193 nm or 157 nm radiation to form a feature having a width win the top layer. A pattern transfer through the underlayer is performed with an anisotropic etch based on H/Nand SOchemistry. The feature formed in the bilayer stack is trimmed by 10 nm or more to a width wby a HBr/O/Clplasma etch. The pattern transfer through an underlying gate layer is performed with a third etch based on HBr/O/Clchemistry. The underlayer is stripped by an Oashing with no damage to the gate electrode. Excellent profile control of the gate electrode is achieved and a larger (w−w) is possible than in prior art methods.