The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 2013
Filed:
Dec. 18, 2009
Bor-wen Chan, Hsin-Chu, TW;
Hsueh Wen Tsau, Zhunan Township, Miaoli County, TW;
Kuang-yuan Hsu, Fongyuan, TW;
Bor-Wen Chan, Hsin-Chu, TW;
Hsueh Wen Tsau, Zhunan Township, Miaoli County, TW;
Kuang-Yuan Hsu, Fongyuan, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
The present disclosure provides various methods of fabricating a semiconductor device. A method of fabricating a semiconductor device includes providing a semiconductor substrate and forming a gate structure over the substrate. The gate structure includes a first spacer and a second spacer formed apart from the first spacer. The gate structure also includes a dummy gate formed between the first and second spacers. The method also includes removing a portion of the dummy gate from the gate structure thereby forming a partial trench. Additionally, the method includes removing a portion of the first spacer and a portion of the second spacer adjacent the partial trench thereby forming a widened portion of the partial trench. In addition, the method includes removing a remaining portion of the dummy gate from the gate structure thereby forming a full trench. A high k film and a metal gate are formed in the full trench.