Tainan, Taiwan

Bo-Syuan Lee

This inventor holds 6 USPTO granted patents. Top assignee: United Microelectronics Corp.. Active years: 2013-2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Bo-Syuan Lee. Retrieved from https://idiyas.com/inventor/bo-syuan-lee

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 6.6

ph-index = 3

Forward Citations = 28(Granted Patents)


Company Filing History:


Years Active: 2013-2015

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6 patents (USPTO):Explore Patents

Title: Bo-Syuan Lee: Innovator in Semiconductor Technology

Introduction

Bo-Syuan Lee is a prominent inventor based in Tainan, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 6 patents. His work focuses on advanced transistor designs and methods for material removal, which are crucial for the development of modern electronic devices.

Latest Patents

One of his latest patents is the Multi-Gate Field-Effect Transistor process. This invention includes a fin-shaped structure, a gate structure, at least one epitaxial structure, and a gradient cap layer. The fin-shaped structure is positioned on a substrate, while the gate structure spans a portion of both the fin-shaped structure and the substrate. The epitaxial structure is situated on the fin-shaped structure adjacent to the gate structure. The gradient cap layer, made of a compound semiconductor, features a gradient distribution of one of its ingredients that decreases from the inner to the outer layer. Additionally, this patent outlines a process for forming the Multi-Gate Field-Effect Transistor.

Another notable patent is a method for removing nitride material. This method involves several steps, starting with a substrate that has at least a gate structure formed on it. A silicon nitride hard mask is then created on top of the gate structure. The process includes a first removal step using a first phosphoric acid solution to eliminate part of the silicon nitride hard mask, followed by a second removal step to clear any remaining material with a second phosphoric acid solution. Notably, the second removal is performed at a lower temperature than the first, and both steps are conducted in-situ.

Career Highlights

Bo-Syuan Lee is currently employed at United Microelectronics Corporation, a leading company in the semiconductor industry. His innovative work has positioned him as a key player in the development of advanced semiconductor technologies.

Collaborations

Throughout his career, Bo-Syuan has collaborated with notable colleagues, including Chin-I Liao and Chia-Lin Hsu. These collaborations have further enhanced his contributions to the field.

Conclusion

Bo-Syuan Lee's innovative patents and contributions to semiconductor technology underscore his importance in the industry. His work continues to influence the development of advanced electronic devices, making him a significant figure in the field of innovation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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