The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2014
Filed:
Apr. 30, 2012
Chin-i Liao, Tainan, TW;
Chia-lin Hsu, Tainan, TW;
Yung-lun Hsieh, Tainan, TW;
Chien-hao Chen, Yun-Lin County, TW;
Bo-syuan Lee, Tainan, TW;
Min-chung Cheng, Chiayi County, TW;
Chin-I Liao, Tainan, TW;
Chia-Lin Hsu, Tainan, TW;
Yung-Lun Hsieh, Tainan, TW;
Chien-Hao Chen, Yun-Lin County, TW;
Bo-Syuan Lee, Tainan, TW;
Min-Chung Cheng, Chiayi County, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A semiconductor process includes the following steps. A semiconductor substrate is provided. The semiconductor substrate has a patterned isolation layer and the patterned isolation layer has an opening exposing a silicon area of the semiconductor substrate. A silicon rich layer is formed on the sidewalls of the opening. An epitaxial process is performed to form an epitaxial structure on the silicon area in the opening.