The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2014
Filed:
Mar. 05, 2013
United Microelectronics Corp., Hsin-Chu, TW;
Chi-Sheng Chen, New Taipei, TW;
Shin-Chi Chen, Penghu County, TW;
Chih-Yueh Li, Taipei, TW;
Ted Ming-Lang Guo, Tainan, TW;
Bo-Syuan Lee, Tainan, TW;
Tsung-Hsun Tsai, Chiayi County, TW;
Yu-Chin Cheng, Kaohsiung, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A method for removing silicon nitride material includes following steps. A substrate having at least a gate structure formed thereon is provided, and at least a silicon nitride hard mask is formed on top of the gate structure. A first removal is performed to remove a portion of the silicon nitride hard mask with a first phosphoric acid (HPO) solution. A second removal is subsequently performed to remove remnant silicon nitride hard mask with a second phosphoric acid solution. The first removal and the second removal are performed in-situ. A temperature of the second phosphoric acid solution is lower than a temperature of the first phosphoric acid solution.