The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2014
Filed:
Jun. 22, 2012
Chin-i Liao, Tainan, TW;
Chia-lin Hsu, Tainan, TW;
Ming-yen LI, Taichung, TW;
Yung-lun Hsieh, Tainan, TW;
Chien-hao Chen, Yun-Lin County, TW;
Bo-syuan Lee, Tainan, TW;
Chin-I Liao, Tainan, TW;
Chia-Lin Hsu, Tainan, TW;
Ming-Yen Li, Taichung, TW;
Yung-Lun Hsieh, Tainan, TW;
Chien-Hao Chen, Yun-Lin County, TW;
Bo-Syuan Lee, Tainan, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A Multi-Gate Field-Effect Transistor includes a fin-shaped structure, a gate structure, at least an epitaxial structure and a gradient cap layer. The fin-shaped structure is located on a substrate. The gate structure is disposed across a part of the fin-shaped structure and the substrate. The epitaxial structure is located on the fin-shaped structure beside the gate structure. The gradient cap layer is located on each of the epitaxial structures. The gradient cap layer is a compound semiconductor, and the concentration of one of the ingredients of the compound semiconductor has a gradient distribution decreasing from bottom to top. Moreover, the present invention also provides a Multi-Gate Field-Effect Transistor process forming said Multi-Gate Field-Effect Transistor.