Taichung, Taiwan

Ming-Yen Li

This inventor holds 4 USPTO granted patents. Top assignee: United Microelectronics Corp.. Active years: 2013-2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ming-Yen Li. Retrieved from https://idiyas.com/inventor/ming-yen-li

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 6.7

ph-index = 3

Forward Citations = 24(Granted Patents)


Company Filing History:


Years Active: 2013-2015

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4 patents (USPTO):Explore Patents

Title: The Innovations of Ming-Yen Li

Introduction

Ming-Yen Li is a prominent inventor based in Taichung, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work focuses on advanced transistor designs that enhance the performance and efficiency of electronic devices.

Latest Patents

Ming-Yen Li's latest patents include innovative designs for Multi-Gate Field-Effect Transistors (MGFETs). One of his notable inventions describes a Multi-Gate Field-Effect Transistor that features a fin-shaped structure, a gate structure, at least one epitaxial structure, and a gradient cap layer. The fin-shaped structure is positioned on a substrate, while the gate structure spans a portion of both the fin-shaped structure and the substrate. The epitaxial structure is situated on the fin-shaped structure adjacent to the gate structure. The gradient cap layer, made of a compound semiconductor, exhibits a gradient distribution of one of its ingredients that decreases from inner to outer. This invention also includes a process for forming the Multi-Gate Field-Effect Transistor.

Another patent by Ming-Yen Li elaborates on a similar Multi-Gate Field-Effect Transistor design, emphasizing the fin-shaped structure, gate structure, and gradient cap layer. In this version, the concentration of one of the ingredients of the compound semiconductor has a gradient distribution that decreases from bottom to top. This innovative approach aims to improve the performance of transistors in various applications.

Career Highlights

Ming-Yen Li is currently employed at United Microelectronics Corporation, a leading company in the semiconductor industry. His work at this organization has allowed him to push the boundaries of technology and contribute to advancements in semiconductor manufacturing.

Collaborations

Ming-Yen Li has collaborated with notable colleagues, including Chia-Lin Hsu and Yung-Lun Hsieh. These partnerships have fostered a creative environment that encourages innovation and the development of cutting-edge technologies.

Conclusion

Ming-Yen Li's contributions to the field of semiconductor technology through his patents and work at United Microelectronics Corporation highlight his role as a key innovator. His advancements in Multi-Gate Field-Effect Transistors are paving the way for future developments in electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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