The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2014
Filed:
Aug. 24, 2011
Chin-i Liao, Tainan, TW;
Chia-lin Hsu, Tainan, TW;
Ming-yen LI, Taichung, TW;
Hsin-huei Wu, Chiayi, TW;
Yung-lun Hsieh, Tainan, TW;
Chien-hao Chen, Yun-Lin County, TW;
Bo-syuan Lee, Tainan, TW;
Chin-I Liao, Tainan, TW;
Chia-Lin Hsu, Tainan, TW;
Ming-Yen Li, Taichung, TW;
Hsin-Huei Wu, Chiayi, TW;
Yung-Lun Hsieh, Tainan, TW;
Chien-Hao Chen, Yun-Lin County, TW;
Bo-Syuan Lee, Tainan, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A semiconductor process includes the following steps. A substrate is provided. At least a fin-shaped structure is formed on the substrate. An oxide layer is formed on the substrate without the fin-shaped structure being formed thereon. A gate is formed to cover a part of the oxide layer and a part of the fin-shaped structure. An etching process is performed to etch a part of the fin-shaped structure beside the gate, therefore at least a recess is formed in the fin-shaped structure. An epitaxial process is performed to form an epitaxial layer in the recess, wherein the epitaxial layer has a hexagon-shaped profile structure.