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For the Inventor, By the Inventor

Hsinchu, Taiwan

Bin-Shing Chen

USPTO Granted Patents = 11

Average Co-Inventor Count = 1.3

ph-index = 4

Forward Citations = 117(Granted Patents)


Location History:

  • Da-Hseuh, TW (1999)
  • Hsinchu, TW (2000 - 2005)

Company Filing History:

goldMedal11 out of 2,037 
 
Winbond Electronics Corporation
 patents

Years Active: 1999-2005

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11 patents (USPTO):Explore Patents
1. 6924527 - Split gate flash memory cell structure and method of manufacturing the same (2005-08-02),
2. 6596574 - Method for forming a flash reference cell (2003-07-22),
3. 6406961 - Process for producing flash memory without mis-alignment of floating gate with field oxide (2002-06-18),
4. 6320789 - Method of chisel programming in non-volatile memory by source bias (2001-11-20),
5. 6251727 - Method of making select gate self-aligned to floating for split gate flash memory structure (2001-06-26),
6. 6221715 - Method of making polysilicon self-aligned to field isolation oxide (2001-04-24),
7. 6200856 - Method of fabricating self-aligned stacked gate flash memory cell (2001-03-13),
8. 6171908 - Method of fabricating self-aligned split gate flash memory cell (2001-01-09),
9. 6136651 - Method of making self-aligned flash memory cell to prevent source line (2000-10-24),
10. 6130129 - Method of making self-aligned stacked gate flush memory with high (2000-10-10),
11. 6005807 - Method and apparatus for self-aligned memory cells and array using (1999-12-21),

Title: The Innovations of Bin-Shing Chen

Introduction

Bin-Shing Chen is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of non-volatile memory technology. With a total of 11 patents to his name, Chen has established himself as a key figure in the industry.

Latest Patents

Among his latest innovations is the "Split gate flash memory cell structure and method of manufacturing the same." This invention involves a non-volatile memory cell that includes a semiconductor substrate and various doped regions, designed to enhance memory performance. Another notable patent is the "Method for forming a flash reference cell," which outlines a process for creating a flash reference memory cell. This method includes steps such as forming a floating well in a substrate and performing heavy ion implantation to improve the operation speed of the device.

Career Highlights

Bin-Shing Chen is currently employed at Winbond Electronics Corporation, where he continues to push the boundaries of memory technology. His work has been instrumental in advancing the capabilities of flash memory devices.

Collaborations

Chen has collaborated with notable colleagues, including Chi-Hung Chao and Yimin Chen, contributing to various projects that enhance memory technology.

Conclusion

Bin-Shing Chen's innovative work in the field of non-volatile memory has made a lasting impact on the industry. His patents reflect a commitment to advancing technology and improving device performance.

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