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For the Inventor, By the Inventor

Hsinchu, Taiwan

Bi-Ling Lin

USPTO Granted Patents = 12

Average Co-Inventor Count = 5.0

ph-index = 5

Forward Citations = 43(Granted Patents)


Company Filing History:

goldMedal12 out of 40,635 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2000-2024

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12 patents (USPTO):
1. 11901289 - Semiconductor device structure with resistive element (2024-02-13),
2. 11404369 - Semiconductor device structure with resistive element (2022-08-02),
3. 10978440 - Circuit layout method (2021-04-13),
4. 10403621 - Circuit layout, layout method and system for implementing the method (2019-09-03),
5. 10304772 - Semiconductor device structure with resistive element (2019-05-28),
6. 9875964 - Semiconductor device components and methods (2018-01-23),
7. 8848374 - Method and structure for dissipating heat away from a resistor having neighboring devices and interconnects (2014-09-30),
8. 8648592 - Semiconductor device components and methods (2014-02-11),
9. 7646207 - Method for measuring a property of interconnections and structure for the same (2010-01-12),
10. 6548363 - Method to reduce the gate induced drain leakage current in CMOS devices (2003-04-15),
11. 6284579 - Drain leakage reduction by indium transient enchanced diffusion (TED) for low power applications (2001-09-04),
12. 6100150 - Process to improve temperature uniformity during RTA by deposition of in (2000-08-08),

Title: Bi-Ling Lin: Inspiring Innovations in Semiconductor Devices

Introduction:

Bi-Ling Lin, a passionate inventor hailing from Hsinchu, Taiwan, has left an indelible mark in the world of inventions with his relentless pursuit of excellence and innovation. With a total of 12 patents to his name, Bi-Ling Lin's dedication to pushing the boundaries of semiconductor device structures has set him apart as a true trailblazer in his field.

Latest Patents:

Among his latest patents is a groundbreaking "Semiconductor Device Structure with Resistive Element," which features a unique design incorporating a resistive element, a thermal conductive element, and intricate geometric intersections on the main surface. This innovation showcases Bi-Ling Lin's ingenuity and commitment to advancing semiconductor technology.

Career Highlights:

Bi-Ling Lin's illustrious career is highlighted by his invaluable contributions to Taiwan Semiconductor Manufacturing Company Ltd. (TSMC). As a key member of the research and development team, he has played a pivotal role in driving technological advancements and paving the way for cutting-edge semiconductor solutions.

Collaborations:

Throughout his career, Bi-Ling Lin has collaborated with esteemed colleagues such as Jiaw-Ren Shih and Jian-Hong Lin. These fruitful collaborations have led to synergistic innovations and breakthroughs in semiconductor device manufacturing, further solidifying Bi-Ling Lin's reputation as a visionary inventor.

Conclusion:

In conclusion, Bi-Ling Lin's passion for innovation and his unwavering commitment to excellence continue to inspire the next generation of inventors. His exceptional achievements in the realm of semiconductor devices underscore his legacy as a trailblazing innovator, whose contributions will resonate in the industry for years to come.

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