The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 02, 2022

Filed:

May. 24, 2019
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Wan-Te Chen, New Taipei, TW;

Chung-Hui Chen, Hsinchu, TW;

Wei-Chih Chen, Hsinchu, TW;

Chii-Ping Chen, Hsinchu, TW;

Wen-Sheh Huang, Hsinchu, TW;

Bi-Ling Lin, Hsinchu, TW;

Sheng-Feng Liu, Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 27/06 (2006.01); H01L 23/367 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5228 (2013.01); H01L 23/3677 (2013.01); H01L 27/0629 (2013.01); H01L 29/42376 (2013.01); H01L 29/78 (2013.01);
Abstract

A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate, a gate stack, and an interconnect structure over the gate stack and the semiconductor substrate. The semiconductor device structure also includes a resistive element over the interconnect structure, and the resistive element is directly above the gate stack. The semiconductor device structure further includes a thermal conductive element over the interconnect structure. The thermal conductive element at least partially overlaps the resistive element. In addition, the semiconductor device structure includes a dielectric layer separating the thermal conductive element from the resistive element.


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