logo

For the Inventor, By the Inventor

Hsinchu, Taiwan

Wen-Sheh Huang

This inventor holds 32 USPTO granted patents and 11 published patent applications, primarily in Semiconductor Devices. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Taiwan Semiconductor Manufacturing Co., Ltd.. Active years: 2011-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Wen-Sheh Huang. Retrieved from https://idiyas.com/inventor/wen-sheh-huang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 32 

% Patents Active = 93.8

Average Co-Inventor Count = 4.5

ph-index = 5

Forward Citations = 59(Granted Patents)


Company Filing History:

goldMedal30 out of 42,872 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal2 out of 481 
 
Taiwan Semiconductor Manufacturing Co., Ltd.
 patents

Years Active: 2011-2026

Loading Chart...
Areas of Expertise:
Thermal Dissipation
Resistive Elements
FinFET Structures
Interconnect Layer
Nitrogen Plasma Treatment
One-Time-Programmable Device
Back-End-of-Line Devices
Integrated Circuits
Metal Gate
Device Structures
EM Calibration
Manufacturing Methods
32 patents (USPTO):Explore Patents
1. 12575409 - Interconnect level with high resistance layer and method of forming the same (2026-03-10),
2. 12543566 - Semiconductor devices and method for forming the same (2026-02-03),
3. 12451401 - Thermal dissipation in semiconductor devices (2025-10-21),
4. 12417955 - Thermal sensor device by back end of line metal resistor (2025-09-16),
5. 12347770 - One-time-programmable device structure (2025-07-01),
6. 12165947 - Semiconductor devices and method for forming the same (2024-12-10),
7. 12159830 - Nitrogen plasma treatment for improving interface between etch stop layer and copper interconnect (2024-12-03),
8. 12119262 - Semiconductor device structure with resistive element (2024-10-15),
9. 12074107 - Structure and method of forming a semiconductor device with resistive elements (2024-08-27),
10. 12068377 - Back-end-of-line devices (2024-08-20),
11. 12040178 - Method for manufacturing semiconductor structure with resistive elements (2024-07-16),
12. 11942390 - Thermal dissipation in semiconductor devices (2024-03-26),
13. 11923295 - Interconnect level with high resistance layer and method of forming the same (2024-03-05),
14. 11901289 - Semiconductor device structure with resistive element (2024-02-13),
15. 11799001 - Back-end-of-line devices (2023-10-24),

Title: The Innovative Journey of Wen-Sheh Huang

Introduction: Wen-Sheh Huang, a pioneering inventor hailing from Hsinchu, Taiwan, has made significant contributions to the field of technology with his groundbreaking inventions.

Latest Patents: Huang's latest patents showcase his commitment to innovation, with a focus on advancements in semiconductor technology and renewable energy solutions.

Career Highlights: Throughout his illustrious career, Wen-Sheh Huang has been at the forefront of technological advancements, leading research and development teams to create cutting-edge solutions that have revolutionized industries.

Collaborations: Huang's collaborative spirit has led to fruitful partnerships with leading tech companies and research institutions, fostering a culture of innovation and knowledge sharing in the field.

Conclusion: In conclusion, Wen-Sheh Huang's dedication to pushing the boundaries of technology and his passion for innovation continue to inspire future generations of inventors and researchers in Taiwan and beyond.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…