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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12040178 B1

PDFFull Text
Date of Patent:
Jul. 16, 2024

Filed:

Apr. 26, 2023

Method for manufacturing semiconductor structure with resistive elements

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Hsiu-Wen Hsueh, Taichung, TW;

Yu-Hsiang Chen, Hsinchu, TW;

Wen-Sheh Huang, Hsinchu, TW;

Chii-Ping Chen, Hsinchu, TW;

Wan-Te Chen, New Taipei, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;

Attorney:

Birch, Stewart, Kolasch & Birch, LLP

Primary Examiner:

Patricia D Valenzuela

Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/304 (2006.01); H01L 21/762 (2006.01); H01L 23/522 (2006.01); H01L 23/64 (2006.01); H01L 27/06 (2006.01); H01L 27/08 (2006.01); H01L 49/02 (2006.01); H01L 23/00 (2006.01); H01L 23/34 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 21/022 (2013.01); H01L 21/304 (2013.01); H01L 21/762 (2013.01); H01L 23/5228 (2013.01); H01L 23/647 (2013.01); H01L 27/0635 (2013.01); H01L 27/0802 (2013.01); H01L 28/24 (2013.01); H01L 23/345 (2013.01); H01L 23/5226 (2013.01); H01L 23/528 (2013.01); H01L 24/05 (2013.01); H01L 28/20 (2013.01); H01L 2924/1305 (2013.01);
Abstract

A semiconductor device structure and method for manufacturing the same are provided. The method includes forming a first resistive element over a substrate, and the first resistive element has a first sidewall extending in a first direction and a second sidewall opposite to the first sidewall and extending in the first direction. The method further includes forming a first conductive feature and a second conductive feature over and electrically connected to the first resistive element and forming a second resistive element over the first resistive element and spaced apart from the first resistive element in a second direction. In addition, the second resistive element is located between the first sidewall and the second sidewall of the first resistive element in a top view, and the first resistive element and the second resistive element are made of different nitrogen-containing materials.

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