The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2023
Filed:
May. 21, 2021
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Yu-Hsiang Chen, Hsinchu, TW;
Po-Hsiang Huang, Taipei, TW;
Wen-Sheh Huang, Hsin Chu, TW;
Hsing-Leo Tsai, Hsinchu, TW;
Chia-En Huang, Hsinchu County, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/41 (2006.01); H01L 29/417 (2006.01); H01L 21/48 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41725 (2013.01); H01L 21/486 (2013.01); H01L 23/5226 (2013.01);
Abstract
A transistor and an interconnect structure disposed over the transistor. The interconnect structure includes a first dielectric layer, a first conductive feature in the first dielectric layer, a first etch stop layer (ESL) disposed over the first dielectric layer and the first conductive feature, a dielectric feature disposed in the first ESL, an electrode disposed over the dielectric feature, and a second ESL disposed on the first ESL and the electrode.