IDiyas

For the Inventor, By the Inventor

Taipei, Taiwan

Sheng-Feng Liu

USPTO Granted Patents = 15 

Average Co-Inventor Count = 3.5

ph-index = 4

Forward Citations = 24(Granted Patents)


Location History:

  • Hsinchu, TW (2018 - 2024)
  • Taipei, TW (2019 - 2024)

Company Filing History:

goldMedal15 out of 40,635 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2018-2025

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15 patents (USPTO):
1. 12438017 - Electromigration evaluation methodology with consideration of thermal and signal effects (2025-10-07),
2. 12099792 - Electromigration evaluation methodology with consideration of both self-heating and heat sink thermal effects (2024-09-24),
3. 12046638 - Fin field effect transistor (FinFET) device having position-dependent heat generation (2024-07-23),
4. 12027391 - Electromigration evaluation methodology with consideration of thermal and signal effects (2024-07-02),
5. 11901289 - Semiconductor device structure with resistive element (2024-02-13),
6. 11687698 - Electromigration evaluation methodology with consideration of both self-heating and heat sink thermal effects (2023-06-27),
7. 11658049 - Electromigration evaluation methodology with consideration of thermal and signal effects (2023-05-23),
8. 11616124 - Method of making fin field effect transistor (FinFET) device (2023-03-28),
9. 11404369 - Semiconductor device structure with resistive element (2022-08-02),
10. 11288437 - Electromigration evaluation methodology with consideration of both self-heating and heat sink thermal effects (2022-03-29),
11. 11107889 - Fin field effect transistor (FinFET) device having position-dependent heat generation (2021-08-31),
12. 11107714 - Electromigration evaluation methodology with consideration of thermal and signal effects (2021-08-31),
13. 10867109 - Electromigration evaluation methodology with consideration of both self-heating and heat sink thermal effects (2020-12-15),
14. 10304772 - Semiconductor device structure with resistive element (2019-05-28),
15. 10032869 - Fin field effect transistor (FinFET) device having position-dependent heat generation and method of making the same (2018-07-24),

Title: The Ingenious Innovator: Sheng-Feng Liu

Introduction:

Meet Sheng-Feng Liu, a brilliant inventor based in Taipei, Taiwan. With an impressive portfolio of 11 patents, he is a trailblazer in the field of semiconductor technology. Let's dive into the world of his latest innovations and contributions.

Latest Patents:

Sheng-Feng Liu's recent patents showcase his expertise in semiconductor device structures and electromigration evaluation methodologies. One of his groundbreaking inventions includes a semiconductor device structure with a unique resistive element and thermal conductive element configuration.

This innovative structure features a thermal conductive element positioned strategically over the substrate to maximize efficiency. By integrating cutting-edge technology, Liu has paved the way for enhanced semiconductor performance in the industry.

Another remarkable patent by Liu is the electromigration evaluation methodology that considers both self-heating and heat sink thermal effects. This methodology revolutionizes the analysis of integrated circuit design layouts by identifying heat-sensitive structures and optimizing heat dissipation mechanisms.

Career Highlights:

Currently affiliated with Taiwan Semiconductor Manufacturing Company Limited (TSMC), Sheng-Feng Liu continues to drive innovation and excellence in the semiconductor sector. His dedication to pushing technological boundaries has earned him a reputation as a visionary in his field.

Collaborations:

In his professional journey, Sheng-Feng Liu has collaborated with esteemed colleagues such as Chun-Wei Chang and Hsien Yu Tseng. Together, they have worked on cutting-edge projects and shared their wealth of knowledge to contribute to the advancement of semiconductor technology.

Conclusion:

Sheng-Feng Liu stands as a beacon of innovation, inspiring others in the realm of semiconductor technology. His inventive spirit and commitment to excellence serve as pillars of progress in the industry. As he continues to break new ground and shape the future of technology, the world eagerly anticipates his next ingenious creations.

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